Hello all,
I am using Olimex E2294 board, I am getting problem in working with Intel’s 4Mb Flash.
When I repeatedly write on the same location again and again, after 6 or 7 writes I get write fail,
I am polling for Status register bit 7, and ensuring that this bit is set before I write the next word, but still I am getting an error.
can anybody help me in this, any idea ???
regards,
Suyash.
Hi,
you can’t write more than once at same location in the flash
this is flash not eeprom technology
erase make all flash locations in 1s and then you can write only 0s
google for flash to learn more
Thanks
Tsvetan
Yes Tsvetan, thanks for ur reply,
thats like a thumbrule for FLASHs.
I already sorted it out, but just consider a following case.
where I want to write only on some particular locations in a single block, but when I want to update them I have to erase the complete 4k/32k block, so it becomes necessory to have a copy of the data at the other locations, and if I am not using External SRAM(in case of E2294 board), my LPC2294’s onchip RAM is only 16k, so how this ould be possible.
Currently I am keeping my data wth a logical seperations which will be match same as the block seperation in the FLash IC.
Anyways, any idea about the above case.
Thanks and Regards,
Suyash
To work around the lack of RAM you could backup all the data to a different flash block (i.e. erase it, write it with all the data from the target block, erase the target block, copy the data from the backup block to the target block, updating values where necessary).
There’s also a limit on the maximum number of erase cycles - keep that in mind. If your data only needs to be updated once a day then it’s no problem, but if you’re updating the data once a minute then your flash will wear out in 3 months.
About what size of data are we talking here, and how often does it get updated?
Regards,
Dominic
yes,
Thanks for your replay,
I will manage it in the similar way you have suggested.
regards,
Suyash.