LPC 2368 IAP Flash Specifications

Development Boards MicroMod
1

For my application I want to use the internal flash memory for context saving during a power fail.

But I cannot find specifications about:

  1. The number of erase/write cycles specified on the flash memory.

  2. The lowest value of Vdd that still allows correct flash erase/write operation.

  3. The eventual extra current needed during erase/write operations.

I only found that an erase (single sector or bulk) takes about 400mS and a 256 byte write takes 1 mS.

I need to save 4 Kbytes of data. That takes 16 mS. The erase I perform after a power up, reading data, and before data is changed. (I use 2 sectors in an alternate mode. This to prevent loosing the context during a powerfail while erasing a sector)

Hope that someone has specifications for me.

Kind regards,

Ernst Losken

2

I have the datasheet for the LPC2106, but probably the LPC2368’s flash is similar.

The LPC2104/2105/2106 flash memory provides a minimum of 100000 erase/write cycles

and 20 years of data retention.

  1. If not specified, it is usually the minimum voltage listed in “Static characteristics”
3

Thank you for the info.

Seems the on board flash allows enough erase/write cycles for my application.

That saves an external flash or eeprom.

Regards,

Ernst